High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure
OSAMU MISHIMA 1,
JUNZO TANAKA 1,
SHINOBU YAMAOKA 1, and
OSAMU FUKUNAGA 1
1 National Institute for Research in Inorganic Materials, 11 Namiki, Sakura-mura, Niihari-gun, Ibaraki 305, Japan.
A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.
Submitted on June 8, 1987
Accepted on August 5, 1987
