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Science 15 July 1988:
Vol. 241. no. 4863, pp. 332 - 334
DOI: 10.1126/science.241.4863.332
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Articles

Design of a Monomeric Arsinogallane and Chemical Conversion to Gallium Arsenide

ERIN K. BYRNE 1, LASZLO PARKANYI 2, and KLAUS H. THEOPOLD 1

1 Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, NY 14853.
2 Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, NY 14853., The Central Research Institute for Chemistry of the Hungarian Academy of Sciences, Budapest, Hungary.

A monomeric arsinogallane containing a covalent gallium-arsenic bond has been prepared, and its molecular structure has been determined by x-ray crystallography. The compound reacted with tert-butanol at ambient temperature to yield the III-V semiconductor gallium arsenide as a finely divided amorphous solid. During the initial stages of the reaction small clusters of gallium arsenide were apparently present in solution. The band gaps of these particles, as observed by their absorption spectra, were larger than that of the bulk material. This work is a step toward the development of new molecular precursors for technologically important materials and the study of quantum size effects in small semiconductor particles.

Submitted on April 18, 1988
Accepted on June 2, 1988


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth.
T. J. Trentler, K. M. Hickman, S. C. Goel, A. M. Viano, P. C. Gibbons, and W. E. Buhro (1995)
Science 270, 1791-1794
   Abstract »    PDF »
GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy.
C. J. SANDROFF, J. P. HARBISON, R. RAMESH, M. J. ANDREJCO, M. S. HEGDE, C. C. CHANG, E. M. VOGEL, and D. M. HWANG (1989)
Science 245, 391-393
   Abstract »    PDF »


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Science. ISSN 0036-8075 (print), 1095-9203 (online)